APTC60HM35T3 APTC60HM35T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 1 - 6 11 q4 14 13 23 q2 10 8 7 3 4 22 29 31 r1 15 16 32 26 19 18 q1 q3 27 30 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 13/14 ; 29/30 ; 22/23 ? absolute maximum ratings these devices are sensitive to electrostatic discharge. proper handing procedures should be followe d. s ymbol parameter ma x ratings unit v dss drain - source breakdown voltage 600 v t c = 25c 72 i d continuo us drain current t c = 80c 54 i dm pulsed drain current 200 a v gs gate - source voltage 20 v r dson drain - source on resistance 35 m ? p d maximum power dissipation t c = 25c 416 w i ar avalanche current (repetitive and non repetitive) 20 a e ar repetitive avalanche energy 1 e as single pulse avalanche energy 1800 mj v dss = 600v r dson = 35m ? max @ tj = 25c i d = 72a @ tc = 25c applicatio n ? welding converters ? switched mode power supplies ? uninterruptible power supplies features ? - ul tra low r dson - low miller capacitance - ul tra low gate charge - avalanche energy rated - very rugged ? kelvin source for easy drive ? very low stray inductance - symmetrical design ? internal thermistor for temperature monitoring ? high level of integration benefits ? outsta ndi ng perfor ma nce at hi gh freq ue nc y operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? each leg can be easily paralleled to achieve a phase leg of twice the current capability f ull - bridge super junction mosfet power module
APTC60HM35T3 APTC60HM35T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 2 - 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit bv dss drain - source breakdown voltage v gs = 0v, i d = 375a 600 v v gs = 0v,v ds = 600v t j = 25c 1 40 i dss zero gate voltage drain current v gs = 0v,v ds = 600v t j = 125c 375 a r ds(on) drain ? source on resistance v gs = 10v, i d = 72a 35 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 5.4ma 2.1 3 3.9 v i gs s gate ? source leakage current v gs = 20 v, v ds = 0v 150 na dynamic characteristics symbol characteristic test conditions min typ max unit c is s input capacitance 14 c oss output capacitance 5.13 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 0.42 nf q g total gate charge 518 q gs gate ? source charge 58 q gd gate ? drain charge v gs = 10v v bus = 300v i d = 72a 222 nc t d(on) tur n-o n delay ti me 21 t r rise time 30 t d(off) turn-off delay time 283 t f fall time inductive switching @ 125c v gs = 15v v bus = 400v i d = 72a r g = 2.5 ? 84 ns e on tur n-o n switchi ng energy x 1340 e off turn-off switching energy y inductive switching @ 25c v gs = 15v, v bus = 400v i d = 72a, r g = 2.5 ? 1960 j e on tur n-o n switchi ng energy x 2192 e off turn-off switching energy y inductive switching @ 125c v gs = 15v, v bus = 400v i d = 72a, r g = 2.5 ? 2412 j source - drain diode ratings and characteristics symbol characteristic test conditions min typ max unit tc = 25c 72 i s continuo us so urce c urrent (body diode) tc = 80c 54 a v sd diode forward voltage v gs = 0v, i s = - 72a 1.2 v dv/dt peak diode recovery z 6 v/ns t rr reverse recovery time t j = 25c 580 ns q rr reverse recovery charge i s = - 72a v r = 350v di s /dt = 200a/s t j = 25c 46 c x e on includes diode reverse recovery. y in accordance with jedec standard jesd24-1. z dv/dt numbers reflect the limitations of the circuit rather than the device itself. i s - 72a di/dt 200a/s v r v dss t j 150c
APTC60HM35T3 APTC60HM35T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 3 - 6 thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case 0.30 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 4.7 n.m wt package weight 110 g temperature sensor ntc symbol characteristic min typ max unit r 25 resistance @ 25c 68 k ? b 25/85 t 25 = 298.16 k 4080 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 package outline 17 12 28 1 t: thermistor temperature r t : thermistor value at t
APTC60HM35T3 APTC60HM35T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 4 - 6 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 4v 4.5v 5v 5.5v 6v 6.5v 0 40 80 120 160 200 240 280 320 360 400 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =15&10v low voltage output characteristics transfert characteristics t j =-55c t j =25c t j =125c 0 40 80 120 160 200 240 280 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.9 0.95 1 1.05 1.1 0 20 40 60 80 100 120 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 36a 0 10 20 30 40 50 60 70 80 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
APTC60HM35T3 APTC60HM35T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 5 - 6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage (normalized) on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d = 72a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 t c , case temper ature ( c) v gs (th), threshold voltage (normalized) maximum safe operating area dc line 10 ms 1 ms 100 s 0.1 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited b y r ds on single pulse t j =150c ciss crss coss 10 100 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =120v v ds =300v v ds =480v 0 2 4 6 8 10 12 14 0 100 200 300 400 500 600 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =72a t j =25c
APTC60HM35T3 APTC60HM35T3 ? rev 0 september, 2004 apt website ? http:/ / www.advancedpower.com 6 - 6 t j =25c t j =150c 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage delay times vs current td(on) td(off) 0 50 100 150 200 250 300 350 0 20 40 60 80 100 120 i d , drain current (a) t d(on) and t d(off) (ns) v ds =400v r g =2.5 ? t j =125c l=100h rise and fall times vs current t r t f 0 20 40 60 80 100 120 0 20406080100120 i d , drain current (a) t r and t f (ns) v ds =400v r g =2.5 ? t j =125c l=100h switching energy vs current e on e off 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 20406080100120 i d , drain current (a) switching energy (mj) v ds =400v r g =2.5 ? t j =125c l=100h e on e off 0 2 4 6 8 10 0 5 10 15 20 25 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =400v i d =72a t j =125c l=100h hard switching zcs zvs 0 20 40 60 80 100 120 140 15 20 25 30 35 40 45 50 55 60 65 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =400v d=50% r g =2.5 ? t j =125c t c =75c ?coolmos? comprise a new family of transistors developed by infineon technologies ag. ?coolmos? is a trademark of infineon technologies ag?. apt re s e rves the rig ht to c ha nge , witho ut notice , the s pe cificatio ns and info rma tio n co nta ine d he re in apt's products are covered by one or more of u.s patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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